v rrm = 400 v - 600 v i f(av) = 100 a features ? high surge capability d-67 package ? types from 400 v to 600 v v rrm ? not esd sensitive parameter symbol murh10040(r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 280 v dc blocking voltage v 400 v silicon super fast recover y diode MURH10060(r) 600 420 600 murh10040 thru MURH10060r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions dc blocking voltage v dc 400 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol murh10040(r) unit a verage forward current (per pkg) i f(av) 100 a peak forward surge current i fsm 2000 a maximum instantaneous forward voltage 1.30 25 a 3ma maximum reverse recovery time t rr 90 ns thermal characteristics maximum thermal resistance, junction - case r jc 0.45 c/w 100 t p = 8.3 ms, half sine 2000 600 -55 to 150 MURH10060(r) 1.70 -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified conditions t c = 140 c maximum reverse current at rated dc blocking voltage i r t j = 125 c i fm = 100 a, t j = 25 c 3 v f v i f =0.5 a, i r =1.0 a, i rr = 0.25 a t j = 25 c 110 0.45 25 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
murh10040 thru MURH10060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. murh10040 thru MURH10060r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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